论文标题
频带弯曲和棘轮解释在弹性电触点二极管中的扭转电源
Band bending and ratcheting explain triboelectricity in a flexoelectric contact diode
论文作者
论文摘要
摩colecelectricity是数千年前认可的，但仍然尚不清楚电荷转移的基本机制。我们最近提出了一个模型，其中由于局部覆盖触点引起的挠性带弯曲驱动非金属中的摩擦电荷转移。尽管该Ab-Initio模型与广泛观察到的现象一致，但迄今为止，尚无对所提出的带弯曲的定量分析。在这项工作中，我们使用pt $ _ {\ mathrm {0.8}} $ ir $ _ {\ Mathrm {0.2}} $导电原子力显微镜探针同时变形了NB掺杂的Srtio $ _ {\ Mathrm {\ Mathrm {3}} $ samples $ smake $ srtio $ _ {一个人期望的基于分析的电流，包括变形半导体的相关挠性带弯曲，与实验符合。该分析表明，摩擦电转移的一般棘轮机制和有力的实验证据表明，挠性带弯曲对于摩擦电触点至关重要。
Triboelectricity was recognized millennia ago, but the fundamental mechanism of charge transfer is still not understood. We have recently proposed a model where flexoelectric band bending due to local asperity contacts drives triboelectric charge transfer in non-metals. While this ab-initio model is consistent with a wide range of observed phenomena, to date there have been no quantitative analyses of the proposed band bending. In this work we use a Pt$_{\mathrm{0.8}}$Ir$_{\mathrm{0.2}}$ conductive atomic force microscope probe to simultaneously deform a Nb-doped SrTiO$_{\mathrm{3}}$ sample and collect current-bias data. The current that one expects based upon an analysis including the relevant flexoelectric band-bending for a deformed semiconductor quantitively agrees with the experiments. The analysis indicates a general ratcheting mechanism for triboelectric transfer and strong experimental evidence that flexoelectric band-bending is of fundamental importance for triboelectric contacts.
