论文标题
相关拉曼成像和扫描电子显微镜:单ga岛在石墨烯的表面增强拉曼光谱中的作用
Correlative Raman Imaging and Scanning Electron Microscopy: the Role of Single Ga Islands in Surface-Enhanced Raman Spectroscopy of Graphene
论文作者
论文摘要
表面增强的拉曼光谱(SERS)是一种透视化的非破坏性分析技术,可以检测单个纳米对象,甚至是单分子。 。在论文中,我们通过超高真空(UHV)蒸发(UHV)蒸发和该系统的局部光学响应研究了CVD石墨烯的GA岛的形态,并通过相关的拉曼成像和扫描电子显微镜(RISE)。与以前的论文相反,在研究石墨烯上的整个不均匀的GA NPS合奏中,仅从整个不均匀的GA NPS组合中进行了积分拉曼响应,RISE技术使我们能够检测到单个GA岛增强的石墨烯拉曼峰,尤其是将拉曼信号与这些单个颗粒的形状和大小相关联。通过这种方式,通过数值模拟的支持,我们证明了与局部表面等离子体共振(LSPR)相关的拉曼信号增强的等离子性质。 已经发现,这种增强是岛屿大小的依赖性,并且显示了中型GA岛的最大值。在GA岛附近的电场增强等离子体电场的模拟与相应拉曼峰的实验强度之间的合理一致性证明了观察到的效应的等离子体起源,称为表面增强的拉曼光谱。
Surface enhanced Raman spectroscopy (SERS) is a perspective non-destructive analytic technique enabling detection of individual nanoobjects, even single-molecules. . In the paper, we have studied the morphology of Ga islands deposited on CVD graphene by ultrahigh vacuum (UHV) evaporation and local optical response of this system by the correlative Raman Imaging and Scanning Electron Microscopy (RISE). Contrary to the previous papers, where only an integral Raman response from the whole ununiformed Ga NPs ensembles on graphene was investigated, the RISE technique has enabled us to detect graphene Raman peaks enhanced by single Ga islands and particularly to correlate the Raman signal with the shape and size of these single particles. In this way and by a support of numerical simulations, we have proved a plasmonic nature of the Raman signal enhancement related to localized surface plasmon resonances (LSPR). It has been found that this enhancement is island-size dependent and shows a maximum for medium-sized Ga islands. A reasonable agreement between the simulations of the plasmon enhancement of electric fields in the vicinity of Ga islands and the experimental intensities of corresponding Raman peaks proved the plasmonic origin of the observed effect known as the Surface Enhanced Raman Spectroscopy.