论文标题
低温2D GAN在SI上的生长（111）7x7在降压氮离子辅助
Low temperature 2D GaN growth on Si (111) 7x7 assisted by hypethermal nitrogen ions
论文作者
论文摘要
随着现代自上而下设备的特征尺寸越来越小，这种设备达到了量子力学给出的操作限制。因此，二维（2D）结构似乎是应对现代光电和旋转器应用最终挑战的最佳解决方案之一。 IIII-V半导体的代表硝酸甘油（GAN）是纳米级水平上紫外线和高功率应用的绝佳候选者。我们提出了一种新的在Si（111）7x7表面上的制造方法，该方法是在低底物温度（t <220°C）下通过热热（E <50 eV）氮离子对GA液滴的硝化方法。 GA液滴的沉积及其后硝化作用均使用我们组中开发的特殊Atom-ion束源进行。在整个制造过程中，这种低温液滴外观（LTDE）方法在整个制造过程中提供了明确定义的超高真空生长条件，从而产生了高纯度GAN纳米结构。 TEM证实了GAN纳米结构与硅底物之间的尖锐界面以及纳米结构的正确元素组成。此外，SEM，X射线光电子光谱（XPS），AFM和螺旋钻微分析显示了制造的GAN纳米结构的独特特征。
As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits given by quantum mechanics. Thus, two-dimensional (2D) structures appear as one of the best solutions to meet the ultimate challenges of modern optoelectronic and spintronic applications. The representative of III-V semiconductors, gallium nitride (GaN), is a great candidate for UV and high-power applications at a nanoscale level. We propose a new way of fabrication of 2D GaN on the Si(111) 7x7 surface using post-nitridation of Ga droplets by hyperthermal (E < 50 eV) nitrogen ions at low substrate temperatures (T < 220°C). Both deposition of Ga droplets and their post-nitridation is carried out using a special atom-ion beam source developed in our group. This low-temperature droplet epitaxy (LTDE) approach provides well-defined ultra-high vacuum growth conditions during the whole fabrication process resulting in high purity GaN nanostructures. A sharp interface between the GaN nanostructures and the silicon substrate together with a correct elemental composition of nanostructures was confirmed by TEM. In addition, SEM, X-ray photoelectron spectroscopy (XPS), AFM and Auger microanalysis showed unique characteristics of the fabricated GaN nanostructures.
