论文标题
掺杂对立方硼的晶格参数和特性的影响
The effect of doping on the lattice parameter and properties of cubic boron nitride
论文作者
论文摘要
已经研究了用铍，硅，硫和镁掺杂立方硼对晶格参数，电导率和EPR光谱的影响。已经确定，与3.9-4.2 GPA的超临界氨中，在3.9-4.2 GPA和1100°C的BN溶液结晶的情况下，掺杂程度显着增加，与4.2 GPA和1400°C的MG-B-N系统的常规合成相比。用硅和铍掺杂会导致立方硼的半导体特性。
The effect of doping of cubic boron nitride with beryllium, silicon, sulfur and magnesium on the lattice parameters, electrical conductivity and EPR spectra has been studied. It is established that the degree of doping increases significantly in the case of crystallization of cubic boron nitride from BN solutions in supercritical ammonia at 3.9-4.2 GPa and 1100°C in comparison with the conventional synthesis from melts of the Mg-B-N system at 4.2 GPa and 1400°C. Doping with silicon and beryllium results in semiconductor properties of cubic boron nitride.
