论文标题
基于GAAS（GAN）AS/GA（ASSB）/（增益）的低阈值操作作为W-Quantum井在O波段中发射
Low-threshold operation of GaAs-based (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well lasers emitting in the O-band
论文作者
论文摘要
研究了生长条件以及设备设计对（增益）为/ga（assb）/（增益）为“ W” - Quantum井井激光器的设备性能的影响。为此，将外在过程缩放到完整的两英寸基材，以提高均匀性，同时在一次运行中进行增长过程以提高质量。此外，通过将包层层内的铝浓度提高到65％的铝浓度来增加光学限制因子。该程序是针对发射波长为1.26千分尺且1.30千分尺的设备进行的。在室温下以1.26千分尺发射的设备时，观察到高达58％的差异效率高至58％，阈值电流密度低至0.16 ka/cm^2。此外，T_0 =（72加负5）k和t_1 =（293加负16）k的出色特征温度在10度摄氏和100摄氏度的温度范围内记录。在1.30千分尺处发射的设备在室温下显示出31％的差异效率，电流密度为0.50 ka/cm^2。这些特性和波长扩展方案的进一步改进是简短的椎间盘。
The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose, the epitaxy process is scaled to full two inch substrates for improved homogeneity while the growth process is carried out in a single run for an improved quality. Furthermore, the optical confinement factor is increased by increasing the aluminum concentration within the cladding layers to a value of 65%. The procedure is carried out for devices with emission wavelengths of 1.26 micrometer as well as 1.30 micrometer. Differential efficiencies as high as 58% and threshold current densities as low as 0.16 kA/cm^2 are observed in case of devices emitting at 1.26 micrometer at room temperature. Furthermore, excellent characteristic temperatures of T_0=(72 plus minus 5)K and T_1=(293 plus minus 16) K are recorded in the temperature range between 10 degree Celsius and 100 degree Celsius. Devices emitting at 1.30 micrometer exhibit differential efficiencies of 31% and threshold current densities of 0.50 kA/cm^2 at room temperature. Further improvements of these properties and wavelength extension schemes are briefly discssused.
