论文标题
Mose2MOS2 HeteroBilayer的光学诱导超快THZ响应的增强
Enhancement in optically induced ultrafast THz response of MoSe2MoS2 heterobilayer
论文作者
论文摘要
大面积MOS2和MOSE2单层及其垂直异质结构的THZ电导率，在0.3-5 THz频率范围内测量Mose2Mos2。与单层相比，当在构成单层的直接带隙能量上方光学激发时，Mose2MOS2 Heterobilayer的超快反射率增强了许多折叠。在杂波中产生的自由载体随着两个单层中的每个单层中的特征时间而发展。令人惊讶的是，当MOS2带隙能在下方激发时，在杂波的超级反射率中记录了相同的增强。提出了对这些观察结果的一种机制。
THz conductivity of large area MoS2 and MoSe2 monolayers as well as their vertical heterostructure, MoSe2MoS2 is measured in the 0.3-5 THz frequency range. Compared to the monolayers, the ultrafast THz reflectivity of the MoSe2MoS2 heterobilayer is enhanced many folds when optically excited above the direct band gap energies of the constituting monolayers. The free carriers generated in the heterobilayer evolve with the characteristic times found in each of the two monolayers. Surprisingly, the same enhancement is recorded in the ultrafst THz reflectivity of the heterobilayer when excited below the MoS2 bandgap energy. A mechanism accounting for these observations is proposed.
