论文标题
H $ _2 $ O分子在Al(111)表面上的偏差依赖性扩散
Bias-dependent diffusion of H$_2$O molecules on an Al(111) surface
论文作者
论文摘要
我们研究了水分子通过第一原理密度功能理论在恒定偏置电压下在Al(111)电极表面扩散的过程。为了了解水在Al(111)上的扩散路径,我们计算了由裸露的弹性带方法与恒定电子化学电位(恒定$μ_ {\ rm e} $)方法相结合的最小能量路径(MEP)。该模拟表明水分子的MEP,其吸附位点和激活屏障在很大程度上取决于施加的偏置电压。水扩散过程对偏置电压的强烈依赖性与先前的扫描隧道显微镜(STM)实验非常吻合。理论和实验结果之间的一致性意味着,准确的偏置电压处理在理解电场与材料表面之间的相互作用方面起着重要作用。扩散过程的比较研究与恒定的电子总数(恒定$ n_ \ mathrm {e} $)方案表明,分子偶极子与电场之间没有强烈的相互作用,这会导致对水在金属表面上的扩散的不同理解。提出的常数$μ_ {\ rm e} $方案是一种现实的工具,用于模拟偏置电压下的反应不仅使用STM,而且在电化学接口处。
We investigate the process by which a water molecule diffuses on the surface of an Al(111) electrode under constant bias voltage by first-principles density functional theory. To understand the diffusion path of the water on the Al(111), we calculated the minimum energy path (MEP) determined by the nudged elastic band method in combination with constant electron chemical potential (constant-$μ_{\rm e}$) methods. The simulation shows that the MEP of the water molecule, its adsorption site, and the activation barrier strongly depend on the applied bias voltage. This strong dependence of the water diffusion process on the bias voltage is in good agreement with the result of a previous scanning tunneling microscopy (STM) experiment. The agreement between the theoretical and experimental results implies that accurate treatment of bias voltage plays a significant role in understanding the interaction between the electric field and the surface of the material. Comparative studies of the diffusion process with the constant total number of electrons (constant-$N_\mathrm{e}$) scheme show that the absence of strong interaction between the molecular dipole and the electric field leads to a different understanding of how water diffuses on a metal surface. The proposed constant-$μ_{\rm e}$ scheme is a realistic tool for the simulation of reactions under bias voltage not only using STM but also at the electrochemical interface.