论文标题
低损失1-4 GHz光学控制的硅等离子体开关
A Low-Loss 1-4 GHz Optically-Controlled Silicon Plasma Switch
论文作者
论文摘要
本文介绍了适用于L-和S波段应用的低损坏的光学内联RF开关。在1.5 W激光功率下，该开关表现出测量的状态插入损失小于0.33 dB的损失，并且在整个频段中，回报损耗高于20 dB。测得的外隔离范围从1 GHz的27 dB到4 GHz的17 dB。该开关包括一个由915 nm激光纤维激发的单硅芯片，该激光纤维产生了电子孔对，从而激发了状态硅等离子体。光纤通过RF底物的底部引导，以照亮芯片，该芯片桥接1.075毫米的微带线间隙。据我们所知，这是当今展示的最低硅等离子体开关。
This paper presents a low-loss optically-controlled inline RF switch suitable for L- and S-band applications. Under 1.5 W laser power, the switch exhibits a measured ON-state insertion loss of less than 0.33 dB and return loss better than 20 dB across the band. The measured OFF-state isolation ranges from 27 dB at 1 GHz to 17 dB at 4 GHz. The switch comprises a single silicon chiplet excited by a 915-nm laser fiber which creates electron-hole pairs, thereby exciting the ON-state silicon plasma. An optical fiber is guided through the bottom of the RF substrate to illuminate the chiplet, which bridges a 1.075-mm microstrip line gap. To the best of our knowledge, this is the lowest-loss silicon plasma switch demonstrated today.
