论文标题

高居里温度铁磁半导体:双明过渡碘v $ _2 $ cr $ _2 $ i $ _9 $

High Curie Temperature Ferromagnetic Semiconductor: Bimetal Transition Iodide V$_2$Cr$_2$I$_9$

论文作者

Ren, Yulu, Li, Qiaoqiao, Wan, Wenhui, Liu, Yong, Ge, Yanfeng

论文摘要

二维尺度的双明过渡碘化物提供了一个有趣的想法,可以将一组单个金属铁磁半导体组合在一起。由双层CRI $ _3 $上的结构工程的动机,以调整其磁性,并通过以一定顺序堆叠范德华过渡金属二进制二进制二进制二进制的范围来实现理想的特性。在这里,我们将单层vi $ _3 $堆放到单层cri $ _3 $上,中层I原子丢弃以构建单层v $ _2 $ _2 $ cr $ _2 $ i $ _9 $。基于此晶体模型,通过第一原理计算确定了7个可能的阶段之间稳定和亚稳态的阶段。可以说的是,这两个阶段的温度$ \ sim $ 6(4)$ 6(4)倍,比单层CRI $ _3 $和VI $ _3 $高。原因可以部分归因于其大型磁各向异性能量(最大值达到412.9 $μ$ ev/atom)。更重要的是,居里温度显示了电场和应变依赖性特征,甚至可以在中等应变范围内超过室温。最后,我们相信双明过渡碘化物v $ _2 $ cr $ _2 $ i $ _9 $单层将支持Spintronic设备的潜在机会。

Bimetal transition iodides in two-dimensional scale provide an interesting idea to combine a set of single-transition-metal ferromagnetic semiconductors together. Motivated by structural engineering on bilayer CrI$_3$ to tune its magnetism and works that realize ideal properties by stacking van der Waals transitional metal dichalcogenides in a certain order. Here we stack monolayer VI$_3$ onto monolayer CrI$_3$ with a middle-layer I atoms discarded to construct monolayer V$_2$Cr$_2$I$_9$. Based on this crystal model, the stable and metastable phases are determined among 7 possible phases by first-principles calculations. It is illustrated that both the two phases have Curie temperature $\sim$ 6 (4) times higher than monolayer CrI$_3$ and VI$_3$. The reason can be partly attributed to their large magnetic anisotropy energy (the maximum value reaches 412.9 $μ$eV/atom). More importantly, the Curie temperature shows an electric field and strain dependent character and can even surpass room temperature under a moderate strain range. At last, we believe that the bimetal transition iodide V$_2$Cr$_2$I$_9$ monolayer would support potential opportunities for spintronic devices.

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