论文标题
Van der waals多性隧道连接
Van der Waals Multiferroic Tunnel Junctions
论文作者
论文摘要
多效性隧道连接（MFTJ）由于其功能性能对非挥发性存储器的有用而引起了重大兴趣。但是，到目前为止，所有现有的MFTJ均基于钙钛矿 - 氧化物异质结构受到相对较高的耐药性区域（RA）产品的限制，对实际应用不利。在这里，使用第一原理计算，我们探索了由二维（2D）铁磁fengete2（n = 3，4，5）电极和2D铁电极在2Se3障碍层中的二维（2D）MFTJ的自旋依赖性传输性能。我们证明，这种femgete2/in2Se3/fengete2（m，n = 3，4，5）mftjs表现出多种非挥发性抗性状态，与2Se3层的铁电的不同极化方向相关，以及两层磁化层的磁化比对。我们发现了一种非常低的RA产品，它使提出的VDW MFTJ优于常规MFTJ，就其对非挥发记忆应用的承诺而言。
Multiferroic tunnel junctions (MFTJs) have aroused significant interest due to their functional properties useful for non-volatile memory devices. So far, however, all the existing MFTJs have been based on perovskite-oxide heterostructures limited by a relatively high resistance-area (RA) product unfavorable for practical applications. Here, using first-principles calculations, we explore spin-dependent transport properties of van der Waals (vdW) MFTJs which consist of two-dimensional (2D) ferromagnetic FenGeTe2 (n = 3, 4, 5) electrodes and 2D ferroelectric In2Se3 barrier layers. We demonstrate that such FemGeTe2/In2Se3/FenGeTe2 (m, n = 3, 4, 5) MFTJs exhibit multiple non-volatile resistance states associated with different polarization orientation of the ferroelectric In2Se3 layer and magnetization alignment of the two ferromagnetic FenGeTe2 layers. We find a remarkably low RA product which makes the proposed vdW MFTJs superior to the conventional MFTJs in terms of their promise for non-volatile memory applications.
