论文标题
宽带晶体管注射双掺杂量子级联激光器
Broadband Transistor-Injected Dual Doping Quantum Cascade Laser
论文作者
论文摘要
提出了一种新颖的设计友好型设备，称为晶体管注射双掺杂量子级联激光器（Ti-D2QCL），在每个均质超级晶格的每个堆栈中都有两个不同的掺杂。通过调整双极晶体管的基本发射极偏置以在双掺杂区域提供电子，可以实现电荷准中性性，以在每个级联的超晶格堆栈中产生不同的光学转变。然后将这些过渡堆叠并放大以促进宽平坦的增益光谱。设计的TI-D2QCL的模型计算表明，可以获得从9.41UM到12.01UM的广泛扁平增益谱，相对带宽为0.24，表明具有双掺杂模式的Ti-D2QCL可以在Mir和Thz频率范围的频率ranges频率上，从而为吸引人的应用程序开辟了一个新的途径，从而打开了一种新的途径，再到宽带频率的频率组合。
A novel design-friendly device called the transistor-injected dual doping quantum cascade laser (TI-D2QCL) with two different doping in each stack of a homogeneous superlattice is proposed. By adjusting the base-emitter bias Vbe of the bipolar transistor to supply electrons in the dual doping regions, charge quasi-neutrality can be achieved to generate different optical transitions in each cascading superlattice stack. These transitions are then stacked and amplified to contribute to a broad flat gain spectrum. Model calculations of a designed TI- D2QCL show that a broad flat gain spectrum ranging from 9.41um to 12.01um with a relative bandwidth of 0.24 can be obtained, indicating that the TI- D2QCL with dual doping pattern may open a new pathway to the appealing applications in both MIR and THz frequency ranges, from wideband optical generations to advanced frequency comb technologies.
