论文标题
砷耐加速量子箱的路线图
Roadmap for gallium arsenide spin qubits
论文作者
论文摘要
由于制造的相对简单性和有利的电子性能，例如单个传导带谷，一个较小的有效质量和稳定的掺杂剂，因此已广泛使用了砷化甲酰基（GAA）中的栅极定义的量子点（GAAS）的量子点。 GAAS旋转量子位很容易在许多实验室中生产，目前已针对各种应用进行研究，包括纠缠，量子非拆卸测量，自动调整，多点阵列，相干交换耦合和传送。即使大量关注转移到其他材料上，GAAS设备也可能仍然是概念验证量子信息处理和固态实验的主力。
Gate-defined quantum dots in gallium arsenide (GaAs) have been used extensively for pioneering spin qubit devices due to the relative simplicity of fabrication and favourable electronic properties such as a single conduction band valley, a small effective mass, and stable dopants. GaAs spin qubits are readily produced in many labs and are currently studied for various applications, including entanglement, quantum non-demolition measurements, automatic tuning, multi-dot arrays, coherent exchange coupling, and teleportation. Even while much attention is shifting to other materials, GaAs devices will likely remain a workhorse for proof-of-concept quantum information processing and solid-state experiments.
