论文标题

通过分子束外延将SR引入BI2SE3薄膜

Introduction of Sr into Bi2Se3 thin films by molecular beam epitaxy

论文作者

Riney, L., Bunker, C., Bac, S. -K., Wang, J., Battaglia, D., Park, Yun Chang, Dobrowolska, M., Furdyna, J. K., Liu, X., Assaf, B. A.

论文摘要

SRXBI2SE3是一种候选拓扑超导体,但其超导性需要通过将SR插入BI2SE3的Van-Waals间隙中。我们通过分子束外延报告了SRXBI2SE3薄膜的合成,并表征了它们的结构,振动和电性能。 X射线衍射和拉曼光谱显示了替代SR合金融合到结构中的证据,而传输测量结果使我们能够将增加的SR含量与N型掺杂的增加相关联,但并未揭示超导性降至1.5K。我们的结果表明,SR主要占据五重奏层中的位置,同时代替BI并用作间隙。我们的结果激发了未来的密度功能研究,以进一步研究SR取代为BI2SE3的能量学。

SrxBi2Se3 is a candidate topological superconductor but its superconductivity requires the intercalation of Sr by into the van-der-Waals gaps of Bi2Se3. We report the synthesis of SrxBi2Se3 thin films by molecular beam epitaxy, and we characterize their structural, vibrational and electrical properties. X-ray diffraction and Raman spectroscopy show evidence of substitutional Sr alloying into the structure, while transport measurements allow us to correlate the increasing Sr content with an increased n-type doping, but do not reveal superconductivity down to 1.5K. Our results suggest that Sr predominantly occupies sites within a quintuple layer, simultaneously substituting for Bi and as an interstitial. Our results motivate future density functional studies to further investigate the energetics of Sr substitution into Bi2Se3.

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