论文标题

弹道石墨烯中的Minigap和Andreev绑定状态

Minigap and Andreev bound states in ballistic graphene

论文作者

Banszerus, Luca, Libisch, Florian, Ceruti, Andrea, Blien, Stefan, Watanabe, Kenji, Taniguchi, Takashi, Hüttel, Andreas K., Beschoten, Bernd, Hassler, Fabian, Stampfer, Christoph

论文摘要

预测,有限大小的正常导体与超导体耦合相结合,预计将展示出所谓的迷你胶质图,其中禁止进行准粒子激发。在这里,我们报告了对弹道石墨烯中这种小型映射的直接观察,并结合了超导更多的铅。通过有限的偏置光谱通过石墨烯区域的弱耦合连接来探测小型图,其值由设备的尺寸给出。除了微型绘制外,我们还观察到差异电阻中的一个明显峰,我们将其归因于位于超导体 - 透明烯界面附近的弱耦合的Andreev结合状态(ABS)。对于弱磁场,在正常导导区域中累积的相位在定量一致中的ABS与基于Bogolioubov-DE Gennes方程以及分析半经典模型的紧密结合计算的预测转移了ABS。

A finite-size normal conductor, proximity-coupled to a superconductor has been predicted to exhibit a so-called minigap, in which quasiparticle excitations are prohibited. Here, we report on the direct observation of such a minigap in ballistic graphene, coupled to superconducting MoRe leads. The minigap is probed by finite bias spectroscopy through a weakly coupled junction in the graphene region and its value is given by the dimensions of the device. Besides the minigap, we observe a distinct peak in the differential resistance, which we attribute to weakly coupled Andreev bound states (ABS) located near the superconductor-graphene interface. For weak magnetic fields, the phase accumulated in the normal-conducting region shifts the ABS in quantitative agreement with predictions from tight-binding calculations based on the Bogolioubov-de Gennes equation as well as with an analytical semiclassical model.

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