论文标题

FESB中的电子掺杂引起的晶体生长和金属铁磁性$ _2 $

Crystal growth and metallic ferromagnetism induced by electron doping in FeSb$_2$

论文作者

Kassem, Mohamed A., Tabata, Yoshikazu, Waki, Takeshi, Nakamura, Hiroyuki

论文摘要

为了研究狭窄的GAB半导体Fesb $ _2 $引起的金属铁磁性,FESB $ _2 $,Fe $ _ {1-x} $ _x $ _x $ _x $ _x $ sb $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ 0 \ x \ le 0.5 $ _ $ 0- $ 0- $ 0- $ 0- $ 0- $ 0- $ 0-y.2-y.2-y.2--yy.2y-2y-2y-2y-2y-2y-2y-2y- \ le y \ le 0.4 $)是通过简化的自流量方法生长的。 From powder x-ray diffraction (XRD) patterns, wavelength-dispersive x-ray spectroscopy (WDX) and x-ray Laue diffraction, pure and doped high-quality single crystals, within the selected solubility range, show only the orthorhombic $Pnnm$ structure of FeSb$_2$ with a monotonic change in lattice parameters with increasing the doping level.与几乎铁磁的小差距半导体的模型一致,FESB $ _2 $ _2 $ Pauli paramagnet的能量差距逐渐被电子掺杂逐渐折叠,然后以$ x $ x $ = 0.15的关闭,以及随后的行动型电子苯甲酸苯甲酸苯甲酸苯甲酸苯甲酸苯甲酸苯非非非交物 /设发非设发/非设建处达级别。鉴于提出的理论场景,建立并讨论了磁相图。

In order to study the metallic ferromagnetism induced by electron doping in the narrow-gab semiconductor FeSb$_2$, single crystals of FeSb$_2$, Fe$_{1-x}$Co$_x$Sb$_2$ ($0 \le x \le 0.5$) and FeSb$_{2-y}$Te$_y$ ($0 \le y \le 0.4$), were grown by a simplified self-flux method. From powder x-ray diffraction (XRD) patterns, wavelength-dispersive x-ray spectroscopy (WDX) and x-ray Laue diffraction, pure and doped high-quality single crystals, within the selected solubility range, show only the orthorhombic $Pnnm$ structure of FeSb$_2$ with a monotonic change in lattice parameters with increasing the doping level. In consistence with the model of nearly ferromagnetic small-gap semiconductor, the energy gap of FeSb$_2$ Pauli paramagnet gradually collapses by electron doping before it closes at about $x$ or $y$ = 0.15 and subsequent itinerant electron anisotropic ferromagnetic states are observed with higher doping levels. A magnetic phase diagram is established and discussed in view of proposed theoretical scenarios.

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