论文标题
图像电位状态和电子转移掺杂唯一的多晶型物的纳米级探测
Nanoscale probing of image-potential states and electron transfer doping in borophene polymorphs
论文作者
论文摘要
使用具有超高真空扫描隧道显微镜的现场发射谐振光谱，我们揭示了V_1/6和V_1/5的V_1/5硼苯二氧化碳多形态（111）的鲜明的图像势态（111），寿命很长，提示高硼苯链烯链和界面质量。这些图像潜力状态允许在纳米级探测唯一的唯一功能和界面电荷转移，并测试广泛使用的唯一唯一自兴趣模型。在明显的屏障高度测量和密度功能理论计算的支持下，对Ag（111）底物的硼苯阶段进行了电子转移掺杂。与自兴奋剂模型相矛盾，与V_1/5硼苯相比，密度的较密集的电子转移掺杂水平更高，从而揭示了底物对硼苯电子转移的重要性。
Using field-emission resonance spectroscopy with an ultrahigh vacuum scanning tunneling microscope, we reveal Stark-shifted image-potential states of the v_1/6 and v_1/5 borophene polymorphs on Ag(111) with long lifetimes, suggesting high borophene lattice and interface quality. These image-potential states allow the local work function and interfacial charge transfer of borophene to be probed at the nanoscale and test the widely employed self-doping model of borophene. Supported by apparent barrier height measurements and density functional theory calculations, electron transfer doping occurs for both borophene phases from the Ag(111) substrate. In contradiction with the self-doping model, a higher electron transfer doping level occurs for denser v_1/6 borophene compared to v_1/5 borophene, thus revealing the importance of substrate effects on borophene electron transfer.
