论文标题
厚度诱导金属对绝缘体电荷转运和颗粒钯纳米膜中的异常氢反应
Thickness induced metal to insulator charge transport and unusual hydrogen response in granular palladium nanofilms
论文作者
论文摘要
这项工作报告了一项系统的研究，该研究对厚度粒度的颗粒超薄膜中电荷传输机制的演变在6nm至2nm之间变化。厚度> 4nm的膜表现出金属行为，而在3nm的厚度则在19.5K处经历金属构造物过渡。相比之下，在所有温度下，2nm厚的薄膜在所有温度下保持绝缘。随着Mott的可变范围跳跃的运输。在室温下，较厚的胶片在H $ _2 $暴露量上显示出阻力降低。绝缘膜在切换到随后的下降之前显示出异常的初始电阻增加。纳米结构依赖性传输和随后的H $ _2 $响应是在渗透模型上建模的，该模型还探讨了膜厚度作为宏观控制参数的相关性，以设计颗粒金属膜中所需的系统响应。
This work reports a systematic study of the evolution of charge transport mechanism in granular ultra-thin films of palladium of thickness varying between 6nm and 2nm. While the films with thickness > 4nm exhibit metallic behaviour, that at 3nm thickness undergoes a metal-insulator transition at 19.5K. In contrast, the 2nm thick film remained insulating at all temperatures. with transport following Mott's variable range hopping. At room temperature, while the thicker film exhibit resistance decrease on H$_2$ exposure. the insulating film showed an anomalous initial resistance increase before switching to a subsequent decrease. The nanostructure dependent transport and the ensuing H$_2$ response is modeled on a percolation model, which also explores the relevance of film thickness as a macroscopic control parameter to engineer the desired system response in granular metal films.
