论文标题
从室温到亚克尔文温度的带隙附近硅的光电吸收横截面
Photoelectric absorption cross section of silicon near the band gap from room temperature to sub-Kelvin temperature
论文作者
论文摘要
将低温硅用作暗物质搜索的检测器培养基正在越来越受欢迎。这些搜索中的许多搜索高度依赖于低温下硅光电吸收横截面的价值，尤其是在硅带隙能量附近，搜索对低质量暗物质候选者最敏感。尽管文献缺乏这样的横截面数据，但以前的暗物质搜索实验试图通过将其除外，从高温数据中推断出该参数。但是，高温数据中的差异导致外推的魔力顺序差异。在本文中，我们通过使用新型技术来解决这些差异，以对硅的光电吸收横截面进行直接的低温测量，该硅在带隙附近的能量。
The use of cryogenic silicon as a detector medium for dark matter searches is gaining popularity. Many of these searches are highly dependent on the value of the photoelectric absorption cross section of silicon at low temperatures, particularly near the silicon band gap energy, where the searches are most sensitive to low mass dark matter candidates. While such cross section data has been lacking from the literature, previous dark matter search experiments have attempted to estimate this parameter by extrapolating it from higher temperature data. However, discrepancies in the high temperature data have led to order-of-magnitude differences in the extrapolations. In this paper, we resolve these discrepancies by using a novel technique to make a direct, low temperature measurement of the photoelectric absorption cross section of silicon at energies near the band gap.
