论文标题

半导体物理:密度功能旅行

Semiconductor Physics: A Density Functional Journey

论文作者

Datta, Sujoy, Jana, Debnarayan

论文摘要

对半导体的理论研究的旅程以非惯性方式进行了审查。我们已经从Hartree-Fock方法的基本引入开始,并介绍了密度功能理论(DFT)的基础。从最古老的局部密度近似(LDA)到半本地校正的最新发展[广义梯度近似(GGA),Meta-GGAS],混合功能和轨道依赖性方法。为了展示DFT的性能,比较了通过不同近似值获得的结果。我们指出了半本地近似值在结构性能预测中的成功。我们还展示了计算成本较小,但是某些半本地DFT方法的架构可以解决频段盖PAP的长途低估。在半导体物理学中,不仅是频带结构预测的重要性,而且还提出了正确计算费米能的重要性,并提出了频带比对的确切发现。费米能源依赖性特性的比较可以引导有关对半导体的现代环境友好研究的理论研究,例如人造光催化,能源有效的光电电子设备等。这种适当选择DFT方法的处方可能有能力补充实验发现,以补充实验发现,并可以构成先进的半指导材料的途径。

The journey of theoretical study on semiconductors is reviewed in a non-conventional way. We have started with the basic introduction of Hartree-Fock method and introduce the fundamentals of Density Functional Theory (DFT). From the oldest Local Density Approximations (LDA) to the most recent developments of semi-local corrections [Generalised Gradient Approximation (GGA), Meta-GGAs], hybrid functionals and orbital dependent methodologies are discussed in detail. To showcase the performance of DFT, results obtained via different approximations are compared. We indicate the success of semi-local approximations in structural properties prediction. We also show how less computationally costly but withstand architecture of some semi-local DFT methods can solve the long riddle of bandgap underestimation. In semiconductor physics, the importance of not only the band structure prediction, but also, the proper calculation of Fermi energy, and, exact finding of band alignment is argued. The comparison of Fermi energy dependent properties can channelize the theoretical studies on modern age environment-friendly researches on semiconductors, like artificial photocatalysis, energy efficient opto-electronic devices, etc. This prescription on proper choice of DFT method is potentially competent to complement the experimental findings as well as can open up a pathway of advanced semiconducting materials discoveries.

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