论文标题
硬X射线光动量显微镜和Kikuchi衍射（in，GA，MN）作为薄膜
Hard X-ray Photoelectron Momentum Microscopy and Kikuchi Diffraction on (In,Ga,Mn)As Thin Films
论文作者
论文摘要
硬X射线光束线和光电子动量显微镜的光彩的最新进展有助于散装价值循环映射和核心级别分辨的硬X射线光电子衍射（HXPD），用于在同一设置中进行结构分析。高质量的MBE生长（IN，GA，MN）作为膜代表理想的测试地面，因为非中心对称GAAS晶体结构本身以及IN和MN掺杂浓度为几％。在这里，我们在Petra III（Desy，Hamburg）上使用硬X射线光子（3至5 keV）的标题化合物的k映射和HXPD的标题化合物的结果和2.5或5.6％Mn的结果。数值处理（差异或比率图像）强调了HXPD模式的细微差异，例如AS和GA位点的指纹样HXPD签名。使用Bloch-Wave方法计算的XPD计算显示了与测量结果一对一的对应关系。 HXPD的结果揭示了Mn的主要GA替代位点。价带映射表明，费米的能量位于价带内，并且随着MN浓度的增加而减小。结果支持标题化合物中铁磁性的P-D Zener模型。除了费米能的转移外，频带分裂还随着MN含量的增加而增加，我们将其归因于多体相关的增加随样品的金属性的增加而增加。
Recent advances in the brilliance of hard-X-ray beamlines and photoelectron momentum microscopy facilitate bulk valence-band mapping and core-level-resolved hard-X-ray photoelectron diffraction (hXPD) for structural analysis in the same setup. High-quality MBE-grown (In,Ga,Mn)As films represent an ideal testing ground, because of the non-centrosymmetric GaAs crystal structure itself and In and Mn doping concentrations of few percent. Here we present results of k-mapping and hXPD for the title compound with 3% In and 2.5 or 5.6% Mn using hard X-ray photons (3 to 5 keV) at beamline P22 at PETRA III (DESY, Hamburg). Numerical processing (difference or ratio images) emphasizes subtle differences of hXPD patterns like the fingerprint-like hXPD-signatures of As and Ga sites. XPD calculations using the Bloch-wave method show a one-to-one correspondence with the measurements. The hXPD results reveal a predominant Ga substitutional site for Mn. Valence band mapping shows that the Fermi energy lies within the valence band and decreases as the Mn concentration increases. The results support the p-d Zener model of ferromagnetism in the title compound. In addition to the shift of the Fermi energy, the band splitting increases with increasing Mn content, which we attribute to an increase of many-body correlations with increasing metallicity of the sample.
