论文标题
不合适的层化合物：掺杂二维过渡金属二分法的平台
Misfit layer compounds: a platform for heavily-doped two-dimensional transition metal dichalcogenides
论文作者
论文摘要
过渡金属二分法（TMDS）显示出丰富的不稳定性，例如自旋和电荷订单，Ising超导性和拓扑特性。它们的物理特性可以通过掺杂在电力双层场效应晶体管（FET）中来控制。但是，对于单层NBSE $ _2 $的情况，FET掺杂限制为$ \ 1 \ times 10^{14} $ cm $^{ - 2} $，而可以通过k原子的沉积来获得更大的电荷注入。在此，通过执行ARPE，STM，准粒子干扰测量以及第一原理计算，我们表明，由夹心NBSE $ _2 $和LASE层形成的不合适化合物作为NBSE $ _2 $ _2 $ _2 $单层的刚性浓度为$ 0.55-0.6 $ $ $ $ $ $ n nb，time 10^6 6 6. 6 6.6 $。 cm $^{ - 2} $。由于这种巨大的兴奋剂，$ 3 \ times3 $充电密度波被$ 2 \ times2 $订单替换，相干长度很短。由于可以通过将TMDS层用岩盐或其他层夹住TMDS层来获得大量不同的不合适化合物，因此我们的工作为探索重掺杂的2D TMD的探索铺平了道路，而不是前所未有的广泛兴奋剂。
Transition metal dichalcogenides (TMDs) display a rich variety of instabilities such as spin and charge orders, Ising superconductivity and topological properties. Their physical properties can be controlled by doping in electric double-layer field-effect transistors (FET). However, for the case of single layer NbSe$_2$, FET doping is limited to $\approx 1\times 10^{14}$ cm$^{-2}$, while a somewhat larger charge injection can be obtained via deposition of K atoms. Here, by performing ARPES, STM, quasiparticle interference measurements, and first principles calculations we show that a misfit compound formed by sandwiching NbSe$_2$ and LaSe layers behaves as a NbSe$_2$ single layer with a rigid doping of $0.55-0.6$ electrons per Nb atom or $\approx 6\times 10^{14}$ cm$^{-2}$. Due to this huge doping, the $3\times3$ charge density wave is replaced by a $2\times2$ order with very short coherence length. As a tremendous number of different misfit compounds can be obtained by sandwiching TMDs layers with rock salt or other layers, our work paves the way to the exploration of heavily doped 2D TMDs over an unprecedented wide range of doping.
