论文标题
掺杂控制从激发型绝缘子到半含量的过渡ta $ _2 $ nise $ _5 $
Doping-controlled transition from excitonic insulator to semimetal in Ta$_2$NiSe$_5$
论文作者
论文摘要
激子绝缘子(EI)是一个有趣的物质绝缘阶段,在该阶段中,电子和孔被粘合到对所谓的激子中,并通过Bose-Einstein凝结(BEC)形成相相状状态。它的理论概念是几十年前提出的,但是由于EI在天然材料中很少发生,并且缺乏兴奋子凝结的方法,因此随后的研究非常有限。在本文中,我们报告了使用$ - $ -Situ $ potassium potossium沉积的掺杂控制的EI至偏 - 金属过渡的实现。与角度分辨光发射光谱(ARPE)结合使用,我们以前所未有的精度通过EI过渡描绘了电子结构的演变。结果不仅表明ta $ _2 $ nise $ _5 $(TNS)是EI起源于半金属非相互作用的频带结构,而且还可以解决两个顺序的过渡,这可以分别归因于相位差异和分配的阶段。我们的结果揭示了TNS的Bardeen-Cooper-Schrieffer(BCS)-BEC交叉行为,并证明其带状结构和激子结合能可以通过碱金属的沉积精确调节。这铺平了一种研究BCS-BEC交叉现象的方法,该现象可以为凝结物和其他多体系统中的多体物理学提供见解。
Excitonic insulator (EI) is an intriguing insulating phase of matter, where electrons and holes are bonded into pairs, so called excitons, and form a phase-coherent state via Bose-Einstein Condensation (BEC). Its theoretical concept has been proposed several decades ago, but the followed research is very limited, due to the rare occurrence of EI in natural materials and the lack of manipulating method of excitonic condensation. In this paper, we report the realization of a doping-controlled EI-to-semi-metal transition in Ta$_2$NiSe$_5$ using $in$-$situ$ potassium deposition. Combining with angle-resolved photoemission spectroscopy (ARPES), we delineate the evolution of electronic structure through the EI transition with unprecedented precision. The results not only show that Ta$ _2 $NiSe$ _5 $ (TNS) is an EI originated from a semi-metal non-interacting band structure, but also resolve two sequential transitions, which could be attributed to the phase-decoherence and pair-breaking respectively. Our results unveil the Bardeen-Cooper-Schrieffer (BCS)-BEC crossover behavior of TNS and demonstrate that its band structure and excitonic binding energy can be tuned precisely via alkali-metal deposition. This paves a way for investigations of BCS-BEC crossover phenomena, which could provide insights into the many-body physics in condensed matters and other many-body systems.