论文标题
石墨烯纳米收缩的应变工程理论
Theory of the Strain Engineering of Graphene Nanoconstrictions
论文作者
论文摘要
应变工程是将石墨烯用作电子设备的关键技术之一：应变诱导的伪规定场反映了狄拉克电子，从而打开了所谓的传导间隙。由于菌株在收缩中积累，石墨烯纳米收缩可能是该技术的好平台。另一方面，在石墨烯纳米收缩中，Fabry-Perot类型的量子干扰在低偏置电压下占主导地位。我们认为这两种效应具有不同的应变依赖性。相对于阳性（拉伸）和负（压缩）应变，伪规格场的贡献是对称的，而量子干扰是反对称的。结果，即使在室温下，电导的特殊应变依赖性也会出现。
Strain engineering is one of the key technologies for using graphene as an electronic device: the strain-induced pseudo-gauge field reflects Dirac electrons, thus opening the so-called conduction gap. Since strain accumulates in constrictions, graphene nanoconstrictions can be a good platform for this technology. On the other hand, in the graphene nanoconstrictions, Fabry-Perot type quantum interference dominates the electrical conduction at low bias voltages. We argue that these two effects have different strain dependence; the pseudo-gauge field contribution is symmetric with respect to positive (tensile) and negative (compressive) strain, whereas the quantum interference is antisymmetric. As a result, a peculiar strain dependence of the conductance appears even at room temperatures.
