论文标题
RF反射仪，用于读取物理定义的PMOS硅量子点中电荷过渡的读数
RF Reflectometry for Readout of Charge Transition in a Physically Defined PMOS Silicon Quantum Dot
论文作者
论文摘要
我们将物理定义的P通道硅MOS量子点（QD）设备嵌入了阻抗变压器RC电路中。为了降低寄生电容并超过了具有顶部大门并充当RC低通滤波器的MOS设备的截止频率，我们制造了一种新设备，以将设备的顶部门从400 $ \ mbox {$μ$ M}^2 $ \ mbox^2 $降低到0.09 $ \ mbox $ \ mbox \ mbox {$ \ mbox {$μ$ m}^2 $}^2 $}^2 $}^2 $。具有较小的顶门会消除截止频率问题，从而阻止了RF信号到达QD。我们证明我们已经正确制造了一个QD，这对于RF单电子晶体管技术至关重要。我们还分析和改善了阻抗匹配条件，并表明可以通过RF反射测量法执行4.2 K的电荷转换读数，这将使我们能够快速读取电荷和旋转状态。
We have embedded a physically defined p-channel silicon MOS quantum dot (QD) device into an impedance transformer RC circuit. To decrease the parasitic capacitance and surpass the cutoff frequency of the device which emerges in MOS devices that have a top gate and act as RC low-pass filter, we fabricate a new device to reduce the device's top gate area from 400 $\mbox{$μ$m}^2$ to 0.09 $\mbox{$μ$m}^2$. Having a smaller top gate eliminates the cutoff frequency problem preventing the RF signal from reaching QD. We show that we have fabricated a single QD properly, which is essential for RF single-electron transistor technique. We also analyze and improve the impedance matching condition and show that it is possible to perform readout of charge transition at 4.2 K by RF reflectometry, which will get us to fast readout of charge and spin states.
