论文标题

在FESE/SRTIO3界面处的超导性的封盖层影响和各向同性的平面内临界场

Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface

论文作者

Li, Yanan, Wang, Ziqiao, Xiao, Run, Li, Qi, Wang, Ke, Richardella, Anthony, Wang, Jian, Samarth, Nitin

论文摘要

与散装FESE相比,由于临界温度的显着升高(TC)的显着升高,并且具有非常规配对机制和拓扑超导性的可能性,因此了解FESE/SRTIO3界面的超导性是当代兴趣的一个问题。我们报告了使用分子束外延在SRTIO3上生长的FESE薄膜中封盖层对超导性的影响的研究。我们用于真空四探针电阻测量和事前磁铁传输测量值,以检查三个盖帽层的效果,这些封顶层提供了明显不同的电荷转移到FESE中:复合宴会,非金属金属TE和金属ZR。我们的结果表明,FETE提供了一个最佳的帽,几乎不会影响原始FESE/SRTIO3中固有的TC,而从非金属TE CAP转移孔完全抑制了超导性并导致绝缘行为。最后,我们使用了宴会封闭的FESE膜中的原位磁化测量值来提取平面内临界磁场的角度依赖性。我们的观察结果揭示了几乎各向同性的内部临界场,从而深入了解了FESE中高温超导性的对称性和配对机理。

Understanding the superconductivity at the interface of FeSe/SrTiO3 is a problem of great contemporary interest due to the significant increase in critical temperature (Tc) compared to that of bulk FeSe, as well as the possibility of an unconventional pairing mechanism and topological superconductivity. We report a study of the influence of a capping layer on superconductivity in thin films of FeSe grown on SrTiO3 using molecular beam epitaxy. We used in vacuo four-probe electrical resistance measurements and ex situ magneto-transport measurements to examine the effect of three capping layers that provide distinctly different charge transfer into FeSe: compound FeTe, non-metallic Te, and metallic Zr. Our results show that FeTe provides an optimal cap that barely influences the inherent Tc found in pristine FeSe/SrTiO3, while the transfer of holes from a non-metallic Te cap completely suppresses superconductivity and leads to insulating behavior. Finally, we used ex situ magnetoresistance measurements in FeTe-capped FeSe films to extract the angular dependence of the in-plane upper critical magnetic field. Our observations reveal an almost isotropic in-plane upper critical field, providing insight into the symmetry and pairing mechanism of high temperature superconductivity in FeSe.

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