论文标题
Nainx2(X = S,SE)用于能源收集应用的分层材料:对光电和热电特性的第一原理见解
NaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties
论文作者
论文摘要
在本研究中,已使用第一个原理方法研究了两种异构结构硫化剂材料,Nains2和Nainse2的结构,电子,光学和热电性能。在我们的结果与可用的实验和理论方面的结果之间发现了一个非常好的协议。从电子带结构和光学特性中证实,所研究的材料在本质上是半导体。与Nains2化合物相比,Na轨道之间的强杂交在Na轨道之间的强杂交向下推动了传统带的底部,从而产生了较窄的Nainse2带隙。首次详细研究了不同的光学(介电函数,吸收系数,吸收系数,折射率和损耗函数)和热电(Seebeck系数,sebeck系数,电导率,功率因数和导热率)(X = S,SE)的性质。发现由于Nainx2的强层结构(X = S,SE),所有这些特性都是各向异性的。在紫外线(紫外线)区域可见的较高的峰值中,具有强烈的光学吸收,而两种化合物的UV区域的反射率都低。这些特征表明在光电部门中应用的可行性。发现沿A轴的Nains2和NainSe2在1000 K时计算出的热电功率因子分别为151.5 micro watt /cmk2和154 micro watt /cmk2,且相应的ZT值为〜0.70。两种化合物的A轴沿A轴获得的热导率都很高(〜22 w/mk)。这表明这种高热电导率的降低对于实现NaInx2(X = S = S,SE)化合物的较高ZT值很重要。
In the present study, the structural, electronic, optical and thermoelectric properties of two isostructural chalcogenide materials, NaInS2 and NaInSe2 with hexagonal symmetry (R-3m) have been studied using the first principles method. A very good agreement has been found between our results with the available experimental and theoretical ones. The studied materials are semiconducting in nature as confirmed from the electronic band structure and optical properties.The strong hybridizations among s orbitals of Na, In and Se atoms push the bottom of the conduction band downward resulting in a narrower band gap of NaInSe2 compared to that of NaInS2 compound. Different optical (dielectric function, photoconductivity, absorption coefficient, reflectivity, refractive index and loss function) and thermoelectric (Seebeck coefficient, electrical conductivity, power factor and thermal conductivity) properties of NaInX2 (X = S, Se) have been studied in detail for the first time. It is found that all these properties are significantly anisotropic due to the strongly layered structure of NaInX2 (X = S, Se). Strong optical absorption with sharp peaks is found in the far visible to mid ultraviolet (UV) regions while the reflectivity is low in the UV region for both the compounds. Such features indicate feasibility of applications in optoelectronic sector.The calculated thermoelectric power factors at 1000 K for NaInS2 and NaInSe2 along a-axis are found to be 151.5 micro Watt /cmK2 and 154 micro Watt/cmK2, respectively and the corresponding ZT values are ~0.70. The obtained thermal conductivity along a-axis for both compounds is high (~22 W/mK).This suggests that the reduction of such high thermal conductivity is important to achieve higher ZT values of the NaInX2(X = S, Se) compounds.