论文标题
硅纳米结构中的孔之间的频段间和内部库仑相互作用
Inter- and intra-band Coulomb interactions between holes in silicon nanostructures
论文作者
论文摘要
我们提出了六波段包络功能方案中硅孔的相互作用哈密顿的完全推导，该方案适当地描述了靠近$ \boldsymbolγ$点的价波段。考虑单孔本征态的完整结构，包括Bloch部分。库仑相互作用引起的散射过程被证明是内标和边缘，后者大多是短距离的。在渐近长期极限中，如先前模型中所假设的那样，有效电势趋于筛选的库仑电位，并纯粹是内的。我们将模型应用于原型硅量子点中两个相互作用孔的激发光谱，并考虑到不同的介电环境。结果表明，在高度筛选的制度中，短距离相互作用（带内和带间）可能非常相关，而当没有筛选的批量硅晶体的适当性之外，它们就会失去重要性。在后一种情况下，我们预测了孔维格分子的形成。
We present a full derivation of the interaction Hamiltonian for holes in silicon within the six-band envelope-function scheme, which appropriately describes the valence band close to the $\boldsymbolΓ$ point. The full structure of the single-hole eigenstates is taken into account, including the Bloch part. The scattering processes caused by the Coulomb interaction are shown to be both intraband and interband, the latter being mostly short-ranged. In the asymptotic long-range limit, the effective potential tends to the screened Coulomb potential, and becomes purely intraband, as assumed in previous models. We apply our model to compute the excitation spectra of two interacting holes in prototypical silicon quantum dots, taking into account different dielectric environments. It is shown that, in the highly screened regime, short-range interactions (both intra- and inter-band) can be very relevant, while they lose importance when there is no screening other than the one proper of the bulk silicon crystal. In the latter case, we predict the formation of hole Wigner molecules.
