论文标题
电子在不同温度下的ALN/GAN共振隧道纳米结构中电子与声音声子的相互作用
Interaction of electrons with acoustic phonons in AlN/GaN resonant tunnelling nanostructures at different temperatures
论文作者
论文摘要
在$ t \ geqslant 0 $的情况下，使用有限温度绿色的功能和dyson方程的方法首次开发了电子基于氮化物的ALN/GAN纳米结构中电子与声音子的相互作用的理论。获得了带有声音子的电子系统的组成部分，并且获得了由于电子音波相互作用而引起的电子光谱偏移的幅度。根据所研究纳米结构中内部电势屏障的位置，发现了电子光谱水平和声音光谱的依赖性。计算了各种温度$ t $值的电子光谱和衰减速率的温度变化。
The theory of the interaction of electrons with acoustic phonons in multilayer nitride-based AlN/GaN nanostructures was developed for the first time at $T\geqslant 0$ using the method of finite-temperature Green's functions and Dyson equation. Components of the Hamiltonian describing the system of electrons with acoustic phonons and the magnitudes of the electron spectrum shifts due to the electron-phonon interaction were obtained. Dependences of the electronic spectrum levels and spectrum of the acoustic phonons were found depending on the position of the internal potential barrier in the studied nanostructure. The temperature shifts of the electronic spectrum and decay rates were calculated for various values of temperature $T$.
