论文标题
拓扑锁定旋转诱导的拓扑绝缘体纳米线的非本地电压
Spin-momentum locking induced non-local voltage in topological insulator nanowire
论文作者
论文摘要
拓扑绝缘子中电荷载体的动量和自旋受到限制，由于强烈的自旋轨道耦合而彼此垂直。我们已经通过磁性隧道连接电极注入自旋极化电子，研究了SB2TE3拓扑绝缘子纳米线中这种独特的自旋摩托锁定性能。非本地电压测量值相对于垂直于纳米线通道的磁场表现出对称性的对称性，该磁场与缺乏自旋摩托明锁定的通道中的非本地测量明显不同。与常规的非本地旋转阀形成鲜明对比的是，所有磁接触的磁矩与SB2TE3纳米线的同时逆转会改变非本地电压。这种不寻常的对称性是SB2TE3纳米线表面状态中自旋摩托明锁定的明确标志。
The momentum and spin of charge carriers in the topological insulators are constrained to be perpendicular to each other due to the strong spin-orbit coupling. We have investigated this unique spin-momentum locking property in Sb2Te3 topological insulator nanowires by injecting spin-polarized electrons through magnetic tunnel junction electrodes. Non-local voltage measurements exhibit a symmetry with respect to the magnetic field applied perpendicular to the nanowire channel, which is remarkably different from that of a non-local measurement in a channel that lacks spin-momentum locking. In stark contrast to conventional non-local spin valves, simultaneous reversal of magnetic moments of all magnetic contacts to the Sb2Te3 nanowire alters the non-local voltage. This unusual symmetry is a clear signature of the spin-momentum locking in the Sb2Te3 nanowire surface states.
