论文标题
尾态引起的半导体 - 导电器，例如在锌 - 锡氧化物光膜纤维晶体管中的子带状光激发下的过渡
Tail-states induced semiconductor-toconductor like transition under sub-bandgap light excitation in the zinc-tin-oxide photothinfilm transistors
论文作者
论文摘要
我们报告了巨大的持续光电导率（PPC）诱导的半导体到导线，例如锌锡氧化物（ZTO）光粉状晶体管（TFT）中的过渡。通过远程血浆反应性溅射制备活动的ZTO通道层，并具有无定形结构。在带有紫外线的ZTO激发ZTO的下，光电流达到〜10 -4 A（照片与黑暗的电流比为〜10 7），并在关闭光线后保持接近该高值。在此期间，ZTO TFT表现出巨大的PPC，并具有持久的恢复时间，这使得ZTO化合物会经历半导体到导线（例如过渡）。在当前情况下，电导率在六个数量级上的变化从〜10-7到0.92Ω-1cm-1。紫外线暴露后，ZTO化合物可能会在指导状态下长达一个月。通过采用放电电流分析（DCA）技术研究缺陷（深层和尾巴），研究了观察到的PPC效应的潜在物理学。 DCA研究的发现揭示了直接证据表明，ZTO的亚间隙尾巴参与了巨型PPC，而深态有助于轻度PPC。
We report on a giant persistent photoconductivity (PPC) induced semiconductor-to-conductor like transition in zinc-tin-oxide (ZTO) photo-thinfilm transistors (TFT). The active ZTO channel layer was prepared by remote-plasma reactive sputtering and possesses an amorphous structure. Under subbandgap excitation of ZTO with UV light, the photocurrent reaches as high as ~10 -4 A (a photo-to-dark current ratio of ~10 7) and remains close to this high value after switching off the light. During this time, the ZTO TFT exhibits gigantic PPC with long-lasting recovery time, which leads the ZTO compound to undergo a semiconductor-to-conductor like transition. In the present case, the conductivity changes over six orders of magnitude, from ~10-7 to 0.92 Ω -1cm-1. After UV exposure, the ZTO compound can potentially remain in the conducting state for up to a month. The underlying physics of the observed PPC effect is investigated by studying defects (deep-states and tail-states) by employing a discharge current analysis (DCA) technique. Findings from the DCA study reveal direct evidence for the involvement of sub-gap tail-states of the ZTO in the giant PPC, while deep-states contribute to mild PPC.
