论文标题
巨型拉什巴半导体bitebr中对称性诱导的非重生的原位调整
In situ tuning of symmetry-breaking induced non-reciprocity in giant-Rashba semiconductor BiTeBr
论文作者
论文摘要
非转向运输，其中左至右流动的电流与右流到左流的不同，是散装晶体中的出乎意料的现象。 Bitebr是一种非中心质合材料，具有巨大的Rashba自旋轨道耦合，当将其放置在平面磁场中时，会呈现出这种异常效果。已经表明，这种效果在很大程度上取决于载体密度，但是，尚未证明原位调节。我们开发了一种方法，通过薄薄的保护性HBN层，通过离子液体门控进行薄薄的咬合片。调整载波密度允许超过\ si {400} {\ persy}的变体，对非重点响应的变化。我们的研究是关于几个原子层的范德华保护层如何允许化学敏感，异国情调的纳米晶体的离子门控的一个里程碑。
Non-reciprocal transport, where the left to right flowing current differs from the right to left flowing one, is an unexpected phenomenon in bulk crystals. BiTeBr is a non-centrosymmetric material, with a giant Rashba spin-orbit coupling which presents this unusual effect when placed in an in-plane magnetic field. It has been shown that this effect depends strongly on the carrier density, however, in-situ tuning has not yet been demonstrated. We developed a method where thin BiTeBr flakes are gate tuned via ionic-liquid gating through a thin protective hBN layer. Tuning the carrier density allows a more than \SI{400}{\percent} variation of the non-reciprocal response. Our study serves as a milestone on how a few-atomic-layer-thin van der Waals protection layer allows ionic gating of chemically sensitive, exotic nanocrystals.
