论文标题
评论：2D拓扑绝缘子的进度和电子设备的潜在AP拼图
Review: Progress on 2D topological insulators and potential ap-plications in electronic devices
论文作者
论文摘要
在过去的几年中，二维拓扑绝缘子（2DTI）引起了人们越来越多的关注。通过理论计算预测了新的2DTI，随着较大的自旋轨道耦合（SOC）差距的增加，其中一些已通过实验合成。在这篇综述中，已经总结了和讨论了从单元石墨烯样材料到双元素的TMD以及具有不同厚度，结构和相位不同的多元素材料的2DTI。总结了拓扑特性（尤其是量子自旋效果和dirac fermion特征）和潜在的应用。这篇综述还指出了未来2DTI研究的挑战和机会，尤其是基于拓扑特性的设备应用程序。
Two-dimensional topological insulators (2DTI) have attracted increasing attention during the past few years. New 2DTI with increasing larger spin-orbit coupling (SOC) gaps have been predicted by theoretical calculations and some of them have been synthesized experimentally. In this review, the 2DTI, ranging from single element graphene-like materials to bi-elemental TMDs and to multi-elemental materials, with different thicknesses, structures and phases, have been summarized and discussed. The topological properties (especially the quantum spin Hall effect and Dirac fermion feature) and potential applications have been summarized. This review also points out the challenge and opportuni-ties for future 2DTI study, especially on the device applications based on the topological properties.
