论文标题

硅层层析成像中的硅多电子人工分子

Bell-state tomography in a silicon many-electron artificial molecule

论文作者

Leon, Ross C. C., Yang, Chih Hwan, Hwang, Jason C. C., Lemyre, Julien Camirand, Tanttu, Tuomo, Huang, Wei, Huang, Jonathan Y., Hudson, Fay E., Itoh, Kohei M., Laucht, Arne, Pioro-Ladrière, Michel, Saraiva, Andre, Dzurak, Andrew S.

论文摘要

经过错误校正的量子处理器将需要数百万个Qubits,从而突出具有少量足迹的纳米级设备(例如硅量子点)的优势。但是,对于每个具有纳米尺寸的装置,原子水平的疾病对量子均匀性有害。在这里,我们研究了限制在硅双量子点人工分子中的两个自旋量子。每个量子点具有强大的外壳结构,当以5或13个电子的占用率操作时,单个旋转 - $ \ frac {1} {2} {2} $ valence电子在其$ p $ - 或$ d $ orbital中,分别为。这些较高的电子占用屏幕原子水平疾病。较大的多电体波函数还可以在相邻的量子电子之间显着重叠,同时为间质交换门电极提供空间。我们使用微磁体的磁场梯度来实现电气驱动的单量子门的磁场梯度,并通过脉冲交换耦合来执行两倍的门,以执行两倍的门。我们使用此门设置来证明富达90.3%的多电极量子盘之间的钟状制备,这是通过使用自旋奇偶校验测量值的两个QUITAING状态断层扫描确认的。

An error-corrected quantum processor will require millions of qubits, accentuating the advantage of nanoscale devices with small footprints, such as silicon quantum dots. However, as for every device with nanoscale dimensions, disorder at the atomic level is detrimental to qubit uniformity. Here we investigate two spin qubits confined in a silicon double-quantum-dot artificial molecule. Each quantum dot has a robust shell structure and, when operated at an occupancy of 5 or 13 electrons, has single spin-$\frac{1}{2}$ valence electron in its $p$- or $d$-orbital, respectively. These higher electron occupancies screen atomic-level disorder. The larger multielectron wavefunctions also enable significant overlap between neighbouring qubit electrons, while making space for an interstitial exchange-gate electrode. We implement a universal gate set using the magnetic field gradient of a micromagnet for electrically-driven single qubit gates, and a gate-voltage-controlled inter-dot barrier to perform two-qubit gates by pulsed exchange coupling. We use this gate set to demonstrate a Bell state preparation between multielectron qubits with fidelity 90.3%, confirmed by two-qubit state tomography using spin parity measurements.

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