论文标题
（010）$β$ -GA $ _2 $ o $ $ _3 $的低温同型$ $ _3 $由金属有机蒸气相位epepasaxy：扩展增长窗口
Low Temperature Homoepitaxy Of (010) $β$-Ga$_2$O$_3$ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window
论文作者
论文摘要
在这项工作中，我们报告了高动力$β$ -GA $ _2 $ o $ _3 $同性恋薄膜的增长，其温度远低于金属有机蒸气相外观的常规生长温度窗口。低温$β$ -GA $ _2 $ o $ $ _3 $薄膜以600 $^{\ circ} $ C上的Fe（010）散装底物在186 cm $^2 $^2 $^2 $^2 $/vs vs for The Inclintentionallincentioncitioncentioncentientionced的电影中显示出明显的结晶质量。 N型掺杂是通过使用Si作为掺杂剂和可控制的掺杂来实现的，范围为2 $ \ times $ 10 $^{16} $ - 2 $ \ times $ 10 $^{19} $ cm $^{ - 3} $。通过比较次级离子质谱法（SIMS）（SIMS）的硅浓度和来自温度依赖性霍尔测量的电子浓度来研究SI掺入和激活。这些薄膜表现出很高的纯度（低C和H浓度），即使在这种增长温度下，也是非常低的补偿受体（2 $ \ times $ 10 $^{15} $ cm $^{ - 3} $）。此外，与在810 $^{\ circ} $ c上观察到的薄膜相比，$ \ sim $ 5nm/dec的正向衰变的突然掺杂曲线是通过在较低温度下生长来证明的。
In this work, we report on the growth of high-mobility $β$-Ga$_2$O$_3$ homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window for metalorganic vapor phase epitaxy. Low-temperature $β$-Ga$_2$O$_3$ thin films grown at 600$^{\circ}$C on Fe-doped (010) bulk substrates exhibits remarkable crystalline quality which is evident from the measured room temperature Hall mobility of 186 cm$^2$/Vs for the unintentionally doped films. N-type doping is achieved by using Si as a dopant and controllable doping in the range of 2$\times$10$^{16}$ - 2$\times$10$^{19}$ cm$^{-3}$ is studied. Si incorporation and activation is studied by comparing silicon concentration from secondary ion mass spectroscopy (SIMS) and electron concentration from temperature-dependent Hall measurements. The films exhibit high purity (low C and H concentrations) with a very low concentration of compensating acceptors (2$\times$10$^{15}$ cm$^{-3}$) even at this growth temperature. Additionally, abrupt doping profile with forward decay of $\sim$ 5nm/dec (10 times improvement compared to what is observed for thin films grown at 810$^{\circ}$C) is demonstrated by growing at a lower temperature.
