论文标题
硅纳米线的谐振弯曲
Resonant bending of silicon nanowires by light
论文作者
论文摘要
两条介电线与矩形横截面的耦合产生粘结和抗键共振。后者的特征是谐振宽度的极大狭窄，即当反键合谐振模式的形态与有效循环循环系统具有高具有较高方位曲线的有效圆线的MIE谐振模式的形态接近时，横截面和电线之间距离的纵横比的变化。然后，平面波与这种反键共振的谐振会导致光学力的前所未有的增强，高达每微米的电线长度高达几个纳米牛顿。力以平面波的入射角振荡，但始终试图击退电线。如果电线在末端固定，光电力会导致订单的弹性偏转$ 100 nm $的$50μm$ $50μm$和1.5MW/μm^2 $。
Coupling of two dielectric wires with rectangular cross-section gives rise to bonding and anti-bonding resonances. The latter is featured by extremal narrowing of the resonant width for variation of the aspect ratio of the cross-section and distance between wires when the morphology of the anti-bonding resonant mode approaches to the morphology of the Mie resonant mode of effective circular wire with high azimuthal index. Then plane wave resonant to this anti-bonding resonance gives rise to unprecedent enhancement of the optical forces up to several nano Newtons per micron length of wires. The forces oscillate with angle of incidence of plane wave but always try to repel the wires. If the wires are fixed at the ends the optical forces result in elastic deflection of wires of order $100 nm$ for wires's length $50μm$ and the light power $1.5mW/μm^2$.
