论文标题
压力诱导的cerhsi $ _ {3} $单晶的超导性 - 高压研究
Pressure induced superconductivity in a CeRhSi$_{3}$ single crystal -- the high pressure study
论文作者
论文摘要
自15年前发现以来，压力引起的非中心对称CERHSI $ _ {3} $和CEIRSI $ _ {3} $ _ {3} $化合物的超导性引起了科学界的极大关注。最新的，所有报告的实验结果均采用杂交缸活塞压力细胞，最大可触及压力为3 GPA。目前的研究重点是使用Bridgman Anvil细胞和Cerhsi $ _ {3} $由SN-True-Flux方法合成的单晶的较高的超导状态，迄今未报告的压力。在2.4 GPA时，超导临界温度从0.4 K从0.4 K到1.1 K的初始增加，然后在将压力增加到3.0 GPA以上时逐渐抑制SC状态，形成典型的圆顶。预计在4.5和5.0 GPa之间，压力引起的超导性将完全抑制。在恒定磁场和高压以及磁化测量值中，电阻率的温度依赖性显示出较大的临界场，在0.6 K和2.4 GPA时超过19 t，急剧降低了超导性圆顶的退缩。先前报告的$ \ it {t-p} $和$ \ it {h-t} $相图由我们的高压数据完成，并在先前结果的框架中进行了讨论。
Pressure induced superconductivity in non-centrosymmetric CeRhSi$_{3}$ and CeIrSi$_{3}$ compounds has attracted significant attention of the scientific community since its discovery 15 years ago. Up-to-date, all reported experimental results were obtained employing the hybrid-cylinder piston pressure cells with a maximum reachable pressure of 3 GPa. Present study focuses on the superconducting state at higher, so far unreported, pressures using the Bridgman anvil cell and a CeRhSi$_{3}$ single crystal synthesized by the Sn-true-flux method. The initial increase of superconducting critical temperature from 0.4 K at 1.1 GPa to 1.1 K at 2.4 GPa is followed by a gradual suppression of SC state upon increasing the pressure above 3.0 GPa, forming a typical dome. The pressure induced superconductivity is expected to be completely suppressed in the pressure region between 4.5 and 5.0 GPa. Temperature dependence of electrical resistivity in constant magnetic fields and high pressures, as well as the magnetoresistance measurements, reveal a large critical field, exceeding 19 T at 0.6 K and 2.4 GPa, sharply decreasing receding the superconductivity dome. The previously reported $\it{T-p}$ and $\it{H-T}$ phase diagrams are completed by our high-pressure data and discussed in the frame of previous results.
