论文标题
将Andreev绑定的状态固定至二维超导体 - 触发器Rashba异质结构中的零能量
Pinning of Andreev bound states to zero energy in two-dimensional superconductor-semiconductor Rashba heterostructures
论文作者
论文摘要
我们考虑使用S-Wave超导体部分覆盖的Rashba自旋轨道相互作用（SOI）的二维电子气体，在那里，未覆盖的区域保持正常状态，但暴露于垂直于平面的有效Zeeman场。我们发现在正常区域中形成的分析和数字上的Andreev结合状态（ABS），并表明，由于SOI并通过将系统的参数深入到拓扑上是微不足道的阶段，人们可以达到最低ABS的能量，最低ABS的能量接近于Zeeman Field的功能。这种ABS的能量显示为Zeeman领域中的逆幂律。我们还考虑了一个超导体 - 触发器异质结构，中心和存在强SOI的超导涡流，并再次发现ABS可以在非语言阶段将接近零的能量固定在零能量中。
We consider a two-dimensional electron gas with Rashba spin-orbit interaction (SOI) partially covered by an s-wave superconductor, where the uncovered region remains normal but is exposed to an effective Zeeman field applied perpendicular to the plane. We find analytically and numerically Andreev bound states (ABSs) formed in the normal region and show that, due to SOI and by tuning the parameters of the system deeply into the topologically trivial phase, one can reach a regime where the energy of the lowest ABS becomes pinned close to zero as a function of Zeeman field. The energy of such an ABS is shown to decay as an inverse power-law in Zeeman field. We also consider a superconductor-semiconductor heterostructure with a superconducting vortex at the center and in the presence of strong SOI, and find again ABSs that can get pinned close to zero energy in the non-topological phase.
