论文标题
Terahertz在光发射二极管中的强场物理学用于Terahertz检测和成像
Terahertz Strong-Field Physics in Light-Emitting Diodes for Terahertz Detection and Imaging
论文作者
论文摘要
强烈的Terahertz(THZ)电磁场已被用来通过基本和集体激发的非扰动驱动来揭示许多材料中各种非线性光学效应。但是,尚未在发光二极管(LED)中发现这种非线性光呼应,让单独使用它们作为快速,具有成本效益,紧凑和室温操作的THZ探测器和相机。在这里,我们报告说,无处不在的LED表现出巨大而快速的光伏信号,当被THZ野外强度> 50 kV/cm照亮时,具有出色的信噪比。我们还成功展示了由THZ领导的探测器和摄像机原型。这些非正统的THZ探测器表现出高响应率(> 1 kV/w),响应时间短于pyroelectric探测器的响应时间短四个数量级。检测机制归因于THZ场诱导的非线性冲击电离和Schottky接触。这些发现不仅有助于加深我们对强大的THZ场相互作用的理解,而且有助于有助于强场THZ诊断的应用。
Intense terahertz (THz) electromagnetic fields have been utilized to reveal a variety of extremely nonlinear optical effects in many materials through nonperturbative driving of elementary and collective excitations. However, such nonlinear photoresponses have not yet been discovered in light-emitting diodes (LEDs), letting alone employing them as fast, cost effective,compact, and room-temperature-operating THz detectors and cameras. Here we report ubiquitously available LEDs exhibited gigantic and fast photovoltaic signals with excellent signal-to-noise ratios when being illuminated by THz field strengths >50 kV/cm. We also successfully demonstrated THz-LED detectors and camera prototypes. These unorthodox THz detectors exhibited high responsivities (>1 kV/W) with response time shorter than those of pyroelectric detectors by four orders of magnitude. The detection mechanism was attributed to THz-field-induced nonlinear impact ionization and Schottky contact. These findings not only help deepen our understanding of strong THz field-matter interactions but also greatly contribute to the applications of strong-field THz diagnosis.