论文标题

兼容的分支$ a^1σ^+\ sim b^3π\ to a^3σ^+/x^1σ^+$ $ transitions在RBCS分子中:测量和计算

The branching ratio of intercombination $A^1Σ^+\sim b^3Π\to a^3Σ^+/X^1Σ^+$ transitions in the RbCs molecule: measurements and calculations

论文作者

Krumins, Valts, Kruzins, Artis, Tamanis, Maris, Ferber, Ruvin, Pashov, Asen, Oleynichenko, Alexander. V, Zaitsevskii, Andrei, Pazyuk, Elena A., Stolyarov, Andrey V.

论文摘要

我们观察到$ a^1σ^+\ sim b^3π\对a^3σ^+/x^1σ^+$激光诱导的荧光(lif)光谱(rbcs分子)从地面$ x^1σ^+$ state ti ti ti ti:sapphire laser激发。傅立叶 - triplet $ a \ sim b $复合物的LIF辐射是由傅立叶转换(FT)光谱仪记录的,工具分辨率为0.03〜cm $^{ - 1} $。 The relative intensity distribution in the rotationally resolved $A\sim b\to a^3Σ^+(v_a)/X^1Σ^+(v_X)$ progressions was measured, and their branching ratio was found to be about of 1$÷$5$ \times$10$^{-4}$ in the bound region of the $a^3Σ^+$ and $X^1Σ^+$ states.该实验与$ a/b -x/a $过渡偶极矩(TDMS)的标量和完全相对论计算相辅相成。对强$ a -x $转换评估的结果\ emph {ab intio} tDM函数的相对系统误差在能量区域的百分比很少,在该函数中,实验LIF强度相关。 FT注册系统的相对光谱敏感性,该系统使用INGAAS二极管检测器和CAF梁切口操作,在$ [6〜500,12〜000] $ 〜cm $^{ - 1} $的范围内通过与Long $ a \ sim b \ sim b \ y the x $ x $ x(kc)的实验强度的比较进行比较。他们的理论对应物使用\ emph {ab initio} $ a -x $ tdms进行了评估。实验和理论过渡概率均可用于改善刺激的拉曼绝热通道过程,即$ a \ to a \ sim b \ to x $,该过程被利用用于激光组装超低RBCS分子。

We observed the $A^1Σ^+\sim b^3Π\to a^3Σ^+/X^1Σ^+$ laser-induced fluorescence (LIF) spectra of the RbCs molecule excited from the ground $X^1Σ^+$ state by the Ti:Sapphire laser. The LIF radiation from the common perturbed levels of the singlet-triplet $A\sim b$ complex was recorded by the Fourier-transform (FT) spectrometer with the instrumental resolution of 0.03~cm$^{-1}$. The relative intensity distribution in the rotationally resolved $A\sim b\to a^3Σ^+(v_a)/X^1Σ^+(v_X)$ progressions was measured, and their branching ratio was found to be about of 1$÷$5$ \times$10$^{-4}$ in the bound region of the $a^3Σ^+$ and $X^1Σ^+$ states. The experiment was complemented with the scalar and full relativistic calculations of the $A/b - X/a$ transition dipole moments (TDMs) as functions of internuclear distance. The relative systematic error in the resulting \emph{ab initio} TDM functions evaluated for the strong $A - X$ transition was estimated as few percent in the energy region, where the experimental LIF intensities are relevant. The relative spectral sensitivity of the FT registration system, operated with the InGaAs diode detector and CaF beam-splitter, was calibrated in the range $[6~500,12~000]$~cm$^{-1}$ by a comparison of experimental intensities in the long $A\sim b\to X(v_X)$ LIF progressions of the K$_2$ and KCs molecules with their theoretical counterparts evaluated using the \emph{ab initio} $A - X$ TDMs. Both experimental and theoretical transition probabilities can be employed to improve the stimulated Raman adiabatic passage process, $a\to A\sim b \to X$, which is exploited for a laser assembling of ultracold RbCs molecules.

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