论文标题
SRTIO3上外延FESE膜中的化学计量和缺陷上层建筑
Stoichiometry and defect superstructures in epitaxial FeSe films on SrTiO3
论文作者
论文摘要
低温扫描隧道显微镜用于研究在各种后增长后退火条件下SRTIO3(001)底物上外部fese薄膜的化学计量和缺陷。过量供应的低温退火导致FE空缺和上层建筑的形成,并伴随着FESE膜中的超导性(金属) - 隔离剂过渡。相比之下,高温退火可以消除FE空位和上层建筑,从而恢复单层FESE膜的高温超导阶段。我们还观察到低温退火期间的多层FESE,这表明与Fe空位形成和Adatom迁移有关。我们的结果记录了膜化学计量的非常特殊的作用,并有助于揭示单层FESE膜特性中的几个争议。
Cryogenic scanning tunneling microscopy is employed to investigate the stoichiometry and defects of epitaxial FeSe thin films on SrTiO3(001) substrates under various post-growth annealing conditions. Low-temperature annealing with an excess supply of Se leads to formation of Fe vacancies and superstructures, accompanied by a superconductivity (metal)-to-insulator transition in FeSe films. By contrast, high-temperature annealing could eliminate the Fe vacancies and superstructures, and thus recover the high-temperature superconducting phase of monolayer FeSe films. We also observe multilayer FeSe during low-temperature annealing, which is revealed to link with Fe vacancy formation and adatom migration. Our results document very special roles of film stoichiometry and help unravel several controversies in the properties of monolayer FeSe films.