论文标题

1.4-mJ高能terahertz辐射来自硅锂

1.4-mJ High Energy Terahertz Radiation from Lithium Niobates

论文作者

Zhang, Baolong, Ma, Zhenzhe, Ma, Jinglong, Wu, Xiaojun, Ouyang1, Chen, Kong, Deyin, Hong, Tianshu, Wang, Xuan, Yang, Peidi, Chen, Liming, Li, Yutong

论文摘要

自由空间超强的Terahertz(THZ)电磁场提供了多方面的功能,可实现极端的非线性THZ光学元件,加速和操纵带电的颗粒,并实现其他有趣的应用。但是,缺乏单个脉冲能量> 1 MJ的强大固态THZ源阻碍了极端THZ应用的扩散。由于高强度泵送导致晶体损伤,线性吸收和非线性失真引起的短有效相互作用长度等,基本挑战在于难以实现高效率。在这里,通过冷冻冷却晶体,精巧地调整泵激光光谱,搅动泵浦脉冲并放大激光能量,我们首先成功地实现了在214-mj fealetsecond lasecond Laser脉冲脉冲的激发下,通过通过斜脉冲的脉冲脉冲脉冲脉冲技术来产生1.4-mJ Thz脉冲lithium niobates。 800 nm至THz的能量转换效率达到0.7%,自由空间THZ峰值电场和磁场达到6.3 mV/cm和2.1 Tesla。我们的数值模拟基于频率域的二阶非线性波方程在缓慢变化的包膜近似下重现了实验优化过程。为了显示这种超强源源的能力,证明了强烈THZ电场引起的高导电硅在高导电硅中由于场诱导的间隔散射效应而引起的非线性吸收。这种具有相对较低峰值频率的高能量THZ源不仅非常适合电子加速到桌面X射线源,而且对于极端THZ科学和非线性应用也非常合适。

Free-space super-strong terahertz (THz) electromagnetic fields offer multifaceted capabilities for reaching extreme nonlinear THz optics, accelerating and manipulating charged particles, and realizing other fascinating applications. However, the lack of powerful solid-state THz sources with single pulse energy >1 mJ is impeding the proliferation of extreme THz applications. The fundamental challenge lies in hard to achieve high efficiency due to high intensity pumping caused crystal damage, linear absorption and nonlinear distortion induced short effective interaction length, and so on. Here, through cryogenically cooling the crystals, delicately tailoring the pump laser spectra, chirping the pump pulses, and magnifying the laser energies, we first successfully realized the generation of 1.4-mJ THz pulses lithium niobates under the excitation of 214-mJ femtosecond laser pulses via tilted pulse front technique. The 800 nm-to-THz energy conversion efficiency reached 0.7%, and a free-space THz peak electric and magnetic fields reached 6.3 MV/cm and 2.1 Tesla. Our numerical simulations based on a frequencydomain second-order nonlinear wave equation under slowly varying envelope approximation reproduced the experimental optimization processes. To show the capability of this super-strong THz source, nonlinear absorption due to field-induced intervalley scattering effect in high conductive silicon induced by strong THz electric field was demonstrated. Such a high energy THz source with a relatively low peak frequency is very appropriate not only for electron acceleration towards table-top X-ray sources but also for extreme THz science and nonlinear applications.

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