论文标题
检测具有导电原子力显微镜的设备的带轮廓
Detecting Band Profiles of Devices with Conductive Atomic Force Microscopy
论文作者
论文摘要
电子设备的带曲线对于确定其性质至关重要。高度要求一种可以在纳米尺度绘制设备内部和边缘的带轮廓的技术。常规的扫描隧道光谱（STS）可以在原子尺度上绘制带状结构，但仅限于大型和导电样品的内部。在这里，我们开发基于导电原子力显微镜的接触模式STS，该STS可以消除这些约束。使用此技术，我们将MOS $ _2 $晶体管的带轮廓绘制在室温下的纳米分辨率。在绝缘基板上，在MOS $ _2 $边缘的18 nm内的频带弯曲在18 nm之内。对于各种电子设备的基础研究和应用研究，此技术将非常有用。
Band profiles of electronic devices are of fundamental importance in determining their properties. A technique that can map the band profile of both the interior and edges of a device at the nanometer scale is highly demanded. Conventional scanning tunneling spectroscopy (STS) can map band structure at the atomic scale, but is limited to the interior of large and conductive samples. Here we develop a contact-mode STS based on conductive atomic force microscope that can remove these constraints. With this technique, we map the band profile of MoS$_2$ transistors with nanometer resolution at room temperature. A band bending of 0.6 eV within 18 nm of the edges of MoS$_2$ on insulating substrate is discovered. This technique will be of great use for both fundamental and applied studies of various electronic devices.
