论文标题

A-BI4BR4中拓扑边缘状态的Ultralong载体寿命

Ultralong carrier lifetime of topological edge states in a-Bi4Br4

论文作者

Mao, Pengcheng, Han, Junfeng, Zheng, Jingchuan, Zhou, Jinjian, Yu, Zhiming, Xiao, Wende, Chen, Dongyun, Wang, Gang, Ma, Jie, Liu, Cheng-cheng, Li, Xiang, Wang, Qinsheng, Duan, Junxi, Chen, Hailong, Weng, Yuxiang, Yao, Yugui

论文摘要

二维(2D)系统中量子自旋霍尔绝缘子(QSHI)的上升一直引起人们对当前研究的重大兴趣,QSHI的标志是该研究的一维螺旋边缘状态,被广泛期望是下一代OptOelectronics的有前途的平台。但是,尚未实验解决一维状态的动力学。在这里,我们使用红外泵红外探针显微镜光谱学报告了A-BI4BR4中拓扑螺旋边缘状态的光学响应的​​观察。值得注意的是,我们观察到,螺旋边缘状态的载体寿命在室温下达到纳秒尺度,大约2-3个订单比大多数2D拓扑表面状态的订单长约2-3个阶,甚至与现代工业中使用的发达光电子半导体相媲美。拓扑边缘状态的超大载体寿命可能归因于其螺旋和1D性质。我们的发现不仅为进一步研究一维螺旋边缘状态的载体动力学提供了理想的材料,而且还为其在光电子中的应用铺平了道路。

The rising of quantum spin Hall insulators (QSHI) in two-dimensional (2D) systems has been attracting significant interest in current research, for which the 1D helical edge states, a hallmark of QSHI, are widely expected to be a promising platform for next-generation optoelectronics. However, the dynamics of the 1D edge states has not yet been experimentally addressed. Here, we report the observation of optical response of the topological helical edge states in a-Bi4Br4, using the infrared-pump infrared-probe microscopic spectroscopy. Remarkably, we observe that the carrier lifetime of the helical edge states reaches nanosecond-scale at room temperature, which is about 2 - 3 orders longer than that of most 2D topological surface states and is even comparable with that of the well developed optoelectronics semiconductors used in modern industry. The ultralong carrier lifetime of the topological edge states may be attributed to their helical and 1D nature. Our findings not only provide an ideal material for further investigations of the carrier dynamics of 1D helical edge states but also pave the way for its application in optoelectronics.

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