论文标题

调整UCR $ _ {2} $ SI $ _2 $的结构和抗铁磁相变

Tuning the structural and antiferromagnetic phase transitions in UCr$_{2}$Si$_2$: hydrostatic pressure and chemical substitution

论文作者

Lai, Y., Wei, K., Chappell, G., Diaz, J., Siegrist, T., Moll, P. J. W., Graf, D., Baumbach, R. E.

论文摘要

出于实用和基础科学的原因,包括$ F $ - 电子材料中的结构相转换吸引了持续的关注,包括它们提供了一个环境,可以直接研究结构与$ f $ state之间的关系。在这里,我们提出了UCR $ _2 $ SI $ _2 $的结果,其中结构(四方$ \ rightArrow $单斜型)和抗铁磁相变的含量为$ t _ {\ rm {s}} $ = $ = $ = $ = $ 205 k和$ t_ $ t_ {我们还提供了证据证明在$ t _ {\ rm {x}} $ = 280 K处的额外二阶相过渡。我们表明$ t _ {\ rm {x}} $,$ t _ {\ rm {s}}} $ {化学替代。尤其是,静水压缩会增加结构排序温度,最终使其与$ t _ {\ rm {x}} $合并并破坏了反铁磁性。相反,系列UCR $ _ {2-x} $ ru $ _x $ _x $ si $ _2 $中的化学替代都抑制了$ t _ {\ rm {s}} $和$ t _ {\ rm {n}} $,使它们接近零温度接近$ x $ $ $ $ $ 0.16和0.08和0.08和0.08和0.08。独特的$ t-p $和$ t-x $相图与刚性CR-SI和Si-Si子结构的演变有关,在该刚性的CR-SI和Si-Si子结构中,施加的压力半均匀地压缩了单位电池和Cr $ \ righarrow $ ru替换会导致沿四方$ c $ causis和ab ab ab $ ab $ - $ -plplane沿单十日lattice lattice压缩。这些结果为一类有趣的强相关量子材料提供了见解,在这些量子材料中,与$ f $ - 电子磁性,强电子相关性和结构不稳定性相关的自由度很容易受到控制。

Structural phase transitions in $f$-electron materials have attracted sustained attention both for practical and basic science reasons, including that they offer an environment to directly investigate relationships between structure and the $f$-state. Here we present results for UCr$_2$Si$_2$, where structural (tetragonal $\rightarrow$ monoclinic) and antiferromagnetic phase transitions are seen at $T_{\rm{S}}$ $=$ 205 K and $T_{\rm{N}}$ $=$ 25 K, respectively. We also provide evidence for an additional second order phase transition at $T_{\rm{X}}$ = 280 K. We show that $T_{\rm{X}}$, $T_{\rm{S}}$, and $T_{\rm{N}}$ respond in distinct ways to the application of hydrostatic pressure and Cr $\rightarrow$ Ru chemical substitution. In particular, hydrostatic compression increases the structural ordering temperature, eventually causes it to merge with $T_{\rm{X}}$ and destroys the antiferromagnetism. In contrast, chemical substitution in the series UCr$_{2-x}$Ru$_x$Si$_2$ suppresses both $T_{\rm{S}}$ and $T_{\rm{N}}$, causing them to approach zero temperature near $x$ $\approx$ 0.16 and 0.08, respectively. The distinct $T-P$ and $T-x$ phase diagrams are related to the evolution of the rigid Cr-Si and Si-Si substructures, where applied pressure semi-uniformly compresses the unit cell and Cr $\rightarrow$ Ru substitution results in uniaxial lattice compression along the tetragonal $c$-axis and an expansion in the $ab$-plane. These results provide insights into an interesting class of strongly correlated quantum materials where degrees of freedom associated with $f$-electron magnetism, strong electronic correlations, and structural instabilities are readily controlled.

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