论文标题

从纳米晶体中的纳米晶体中语音辅助的电子和激子的放松的摘要模型

Ab Initio Modeling of Phonon-Assisted Relaxation of Electrons and Excitons in Semiconductor Nanocrystals for Multiexciton Generation

论文作者

Zeng, Taofang, He, Yi

论文摘要

在GW-BSE(Bethe-Salpeter方程)方法的框架下制定和计算纳米群体中的电子phonon和激子 - Phonon相互作用。首次用两粒子表示对声子效应进行建模。计算电子和激子的非辐射放松率。发现单音弛豫和多刺弛豫在纳米晶体中都是显着的,并且对应于具有完全不同光谱线形的两种类型的物理过程。此外,多音调弛豫总是发生,其速率与所研究系统中电子和激子的相应单形成弛豫率相当(SI46)。电子和激子的非弹性散射速率也基于多体绿色功能理论计算。对于SI46中的电子状态,预计非弹性散射衰减是多型衰变的主要衰减机制,而非辐射弛豫率大于SI46中大多数激素状态的非弹性散射速率。

Electron-phonon and exciton-phonon interactions in nanoclusters are formulated and computed under the framework of GW-BSE (Bethe-Salpeter equation) approach. The phonon effect is modeled with the two-particle representation for the first time. The nonradiative relaxation rates of electrons and excitons are calculated. It is uncovered that both single-phonon relaxation and multiple-phonon relaxation are significant in nanocrystals, and correspond to two types of physical processes that have totally different spectral lineshapes. Furthermore, the multiple-phonon relaxation always occurs and its rates are comparable to the corresponding single-phonon relaxation rates for both electrons and excitons in the system studied (Si46). The inelastic scattering rates of electrons and excitons are also calculated based on many-body Green function theory. For the electronic states in Si46, the inelastic scattering decay is predicted to be a primary decay mechanism for multiexciton relaxation, and nonradiative relaxation rates are larger than inelastic scattering rates for most excitonic states in Si46.

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