论文标题
fmax = 270 GHz Inaln/gan hemt在Si上，形成气/氮两步退火
Fmax = 270 GHz InAlN/GaN HEMT on Si with forming gas/nitrogen two-step annealing
论文作者
论文摘要
在这封信中，在SI上的Inaln/gan hemts退火期间，使用了N2和形成气体（FG）。发现N2退火具有较低的欧姆接触电阻（RC），而FG退火具有较低的板电阻（RSHEET）。然后使用FG/N2两步退火来实现113 mV/dec的亚阈值摇摆（SS），ON/OFF电流（ION/IOFF）的比率约为106，跨导（GM）峰值为415 ms/mm，峰值为415 ms/mm，创纪录的低排水障碍（DIBL）的频率为65 mV/v，fmagy profence of 65 mv/v，fmagy highs froper frove（dib）的频率为27 mv/v，fm频率为65 mV/v，fm after（dib）的频率（dib）高点（DIBL）。 50 nm inaln/gan hemt on Si。
In this letter, N2 and forming gas (FG) were used during ohmic contact annealing of InAlN/GaN HEMTs on Si. It is found that N2 annealing offers lower ohmic contact resistance (RC) while FG annealing features lower sheet resistance (Rsheet). Then FG/N2 two-step annealing was used to achieve a subthreshold swing (SS) of 113 mV/dec, an on/off current (Ion/Ioff) ratio of ~ 106, a transconductance (gm) peak of 415 mS/mm, a record low drain-inducing barrier lowing (DIBL) of 65 mV/V, and a record high power gain cutoff frequency (fmax) of 270 GHz on 50-nm InAlN/GaN HEMT on Si.
