论文标题
Bitei的拓扑相变的温度依赖性是从第一原理
Temperature dependence of the topological phase transition of BiTeI from first principles
论文作者
论文摘要
从微不足道的绝缘子到$ \ mathbb {z} _2 $拓扑绝缘子的拓扑相过渡需要散装带隙即可消失。在非中心对称材料的情况下,这些相通过无间隙的Weyl半含相分离。但是,在有限温度下,差距会受原子运动,通过电子 - 波相互作用以及晶格的热膨胀影响。结果,拓扑非平凡的相位的相空间受温度的影响。在本文中,根据第一原理研究了bitei间接带隙的压力和温度依赖性。我们评估了电子 - 光子相互作用和热膨胀的贡献,并表明它们的综合效应将拓扑相变向较高的压力,随着温度的升高。值得注意的是,我们发现,根据它们的主要轨道特征,频带极值对电子相互作用的敏感性和拓扑对电子相互作用的敏感性显着差异。我们的结果表明,与静态晶格结果相比,温度的Weyl半相位宽度增加了,几乎翻了一番。因此,我们的发现提供了对Bitei非平凡阶段的实验检测的指南,并说明了非中心对称材料中Weyl半准相的相空间如何受到温度的显着影响。
A topological phase transition from a trivial insulator to a $\mathbb{Z}_2$ topological insulator requires the bulk band gap to vanish. In the case of noncentrosymmetric materials, these phases are separated by a gapless Weyl semimetal phase. However, at finite temperature, the gap is affected by atomic motion, through electron-phonon interaction, and by thermal expansion of the lattice. As a consequence, the phase space of topologically nontrivial phases is affected by temperature. In this paper, the pressure and temperature dependence of the indirect band gap of BiTeI is investigated from first principles. We evaluate the contribution from both electron-phonon interaction and thermal expansion, and show that their combined effect drives the topological phase transition towards higher pressures with increasing temperature. Notably, we find that the sensitivity of both band extrema to pressure and topology for electron-phonon interaction differs significantly according to their leading orbital character. Our results indicate that the Weyl semimetal phase width is increased by temperature, having almost doubled by 100 K when compared to the static lattice results. Our findings thus provide a guideline for experimental detection of the nontrivial phases of BiTeI and illustrate how the phase space of the Weyl semimetal phase in noncentrosymmetric materials can be significantly affected by temperature.