论文标题
直接间隙半导体中的三光子吸收光谱和带隙缩放
Three-Photon Absorption Spectra and Bandgap Scaling in Direct-Gap Semiconductors
论文作者
论文摘要
本文介绍了9个直接间隙半导体的三光子吸收（3PA）测量结果，包括ZNSE，ZNS和GAAS的完整3PA光谱。这些结果以及我们使用8波段kane模型的3PA理论（4个带有双自旋退化的频段），有助于解释迄今为止文献中实验和理论之间的显着分歧。 8波段模型中的3PA在以前的2波段理论中未观察到的各种可能的途径之间表现出量子干扰。我们介绍了INSB，GAAS，CDTE，CDSE，ZNTE，CDS，CDS，ZNSE，ZNO和ZNS中退化3PA系数的测量。我们使用2频段隧道和扰动理论来检查带隙，例如，缩放，这些理论与预测的Eg^-7依赖性一致；但是，对于我们测量完整3PA光谱的那些半导体，我们观察到两种波段理论的显着差异。另一方面，我们的8频段模型与光谱数据显示出极好的一致性。然后，我们使用我们的8波段理论来预测其锌蓝色形式的15个不同半导体的3PA光谱。这些结果可以预测和解释3PA系数，用于各种狭窄至宽的带隙半导体。
This paper presents three-photon absorption (3PA) measurement results for nine direct-gap semiconductors, including full 3PA spectra for ZnSe, ZnS, and GaAs. These results, along with our theory of 3PA using an 8-band Kane model (4 bands with double spin degeneracy), help to explain the significant disagreements between experiments and theory in the literature to date. 3PA in the 8-band model exhibits quantum interference between the various possible pathways that is not observed in previous 2-band theories. We present measurements of degenerate 3PA coefficients in InSb, GaAs, CdTe, CdSe, ZnTe, CdS, ZnSe, ZnO, and ZnS. We examine bandgap, Eg, scaling using 2-band tunneling and perturbation theories that show agreement with the predicted Eg^-7 dependence; however, For those semiconductors for which we measured full 3PA spectra, we observe significant discrepancies with both 2-band theories. On the other hand, our 8-band model shows excellent agreement with the spectral data. We then use our 8-band theory to predict the 3PA spectra for 15 different semiconductors in their zincblende form. These results allow prediction and interpretation of the 3PA coefficients for various narrow to wide bandgap semiconductors.
