论文标题
N通道双门控有机场效应晶体管中的最高介电诱导的双极性
Top Dielectric Induced Ambipolarity in an n-channel dual-gated Organic Field Effect Transistor
论文作者
论文摘要
单个有机场效应晶体管（OFET）中P型和N型操作的实现对于简化复杂有机电路的设计至关重要。通常，仅在OFET中实现P型或N型操作，而相应的对应物要么被电荷捕获抑制，要么受电极的注射屏障限制。在这里，我们表明，只有顶部介电的存在将N型聚合物半导体（N2200，Polyera Activeink）变成歧义性的，从底部和顶部的OFET操作中都检测到。该效果与通道厚度和顶部介电组合无关。可变温度转移特性表明，电子和孔都可以平均通过聚合物半导体的大部分运输。
The realization of both p-type and n-type operations in a single organic field effect transistor (OFET) is critical for simplifying the design of complex organic circuits. Typically, only p-type or n-type operation is realized in an OFET, while the respective counterpart is either suppressed by charge trapping or limited by the injection barrier with the electrodes. Here we show that only the presence of a top dielectric turns an n-type polymer semiconductor (N2200, Polyera ActiveInk) into an ambipolar one, as detected from both bottom and top gated OFET operation. The effect is independent of the channel thickness and the top dielectric combinations. Variable temperature transfer characteristics show that both the electrons and holes can be equally transported through the bulk of the polymer semiconductor.
