论文标题

电阻随机访问存储通道的性能限制和编码方案

Performance Limit and Coding Schemes for Resistive Random-Access Memory Channels

论文作者

Song, Guanghui, Cai, Kui, Zhong, Xingwei, Yu, Jiang, Cheng, Jun

论文摘要

电阻随机记忆(RERAM)是下一代非易失性记忆技术的有前途的候选人,由于其简单的读/写操作和高存储密度。但是,其横梁阵列结构会引起严重的干扰效果,称为“偷偷摸摸的路径”。在本文中,我们提出了可以减轻偷偷摸摸干扰和通道噪声的通道编码技术。主要的挑战是,偷偷摸摸的干扰是数据依赖性的,并且在内存阵列中也相关联,因此,常规的误差校正编码方案将不足。在这项工作中,我们提出了一个跨阵列编码策略,该策略将代码字分配给多个独立的内存数组,并利用实时频道估计方案来估计RERAM通道的瞬时状态。由于来自不同阵列的编码位会经历独立的频道,因此可以在解码过程中获得“多样性”增益,而当代码字可以在不同的内存阵列上分布时,该代码实际上是在不相关的通道上执行的。通过基于处理干扰的方案(TIN)进行解码,在不同存储器阵列上的RERAM通道等同于我们定义的块变化通道,为此我们提出了容量界限和编码方案。所提出的编码方案由与数据塑造器的优化误差校正代码的串行串联组成,这使得RERAM系统能够达到接近容量的限制存储效率。

Resistive random-access memory (ReRAM) is a promising candidate for the next generation non-volatile memory technology due to its simple read/write operations and high storage density. However, its crossbar array structure causes a severe interference effect known as the "sneak path." In this paper, we propose channel coding techniques that can mitigate both the sneak-path interference and the channel noise. The main challenge is that the sneak-path interference is data-dependent, and also correlated within a memory array, and hence the conventional error correction coding scheme will be inadequate. In this work, we propose an across-array coding strategy that assigns a codeword to multiple independent memory arrays, and exploit a real-time channel estimation scheme to estimate the instantaneous status of the ReRAM channel. Since the coded bits from different arrays experience independent channels, a "diversity" gain can be obtained during decoding, and when the codeword is adequately distributed over different memory arrays, the code actually performs as that over an uncorrelated channel. By performing decoding based on the scheme of treating-interference-as-noise (TIN), the ReRAM channel over different memory arrays is equivalent to a block varying channel we defined, for which we propose both the capacity bounds and a coding scheme. The proposed coding scheme consists of a serial concatenation of an optimized error correction code with a data shaper, which enables the ReRAM system to achieve a near capacity limit storage efficiency.

扫码加入交流群

加入微信交流群

微信交流群二维码

扫码加入学术交流群,获取更多资源